Product Code: ICA11_M1106

355Nm DPSS UV Laser Micromachining of Single-Crystal Silicon
Authors:
Huan Yang, Wuhan National Laboratory for Optoelectronics; Wuhan Peoples Republic of China
Jun Duan, Wuhan National Laboratory for Optoelectronics; Wuhan Peoples Republic of China
Xiaoyan Zeng, Wuhan National Laboratory for Optoelectronics; Wuhan Peoples Republic of China
Yu Cao, Wuhan National Laboratory for Optoelectronics; -
Presented at ICALEO 2011

In recent years, laser micromachining of semiconductor materials such as silicon and sapphire has attracted more and more attention. High power Diode Pumped Solid State (DPSS) UV lasers have been gained wider application in microelectronics, flat panel display, and solar cell manufacturing industries because it can obtain smaller feature sizes, higher throughput and lower costs per part. In this paper, the experiments of percussion drilling and etching was carried out on single-crystal silicon by a 355nm Nd:YVO4 laser. In order to meet the technologic requirement of laser micromachining, the experimental investigations in the accuracy of both single layer and multilayer depth were carried out with different laser processing modes and parameters. The effects of the parameters (pulse energy, repetition rate, scanning speed, scan spacing and pressure of assistant-gas) on the quality of both single-layer and multilayer depth were investigated and analyzed. The mechanism of laser etching was also discussed. Some planar structures were processed on the Si surface by the optimal parameters. And then, 3D structures such as quadrangular frustum pyramid and hemisphere were manufactured by using new methods. The experimental results show that the quality with smaller thermal damage zones, less spatters and no cracks could be achieved by laser multi scan etching with high scanning speed, and a UV laser micro-processing system designed and developed by ourselves could directly create real 2-D and 3-D structures on the surface of silicon wafer.