Product Code: ICAL07_N302

Enhancement of the Light Emission of Si Nanocrystals (Invited Paper - 40 Minute Presentation)
Authors:
Ming Lu, Fudan University; Shanghai Peoples Republic of China
Zhi-qiang Xie, Fudan University; Shanghai Peoples Republic of China
Ying-cui Fang, Fudan University; Shanghai Peoples Republic of China
You-yuan Zhao, Fudan University; Shanghai Peoples Republic of China
Zhuang-jian Zhang, Fudan University; Shanghai Peoples Republic of China
Presented at ICALEO 2007

Si nanocrystal-doped SiO2, or Si-nc:SiO2, has become a key material for developing Si light sources. How to increase its brightness is a current problem that needs to be solved before a practical Si light source is attempted. We have worked out a method of CeF3 doping for this purpose. After a careful treatment, the photoluminescence (PL) intensity of Si nanocrystals from Si-nc:SiO2 with thickness of 160nm can be enhanced by a factor of ~15. A CeF3-doped multilayer structure of Si-nc:SiO2 is then proposed, aiming at a tunable and highly luminescent Si light source. The PL intensity of such a multilayer Si-nc:SiO2 with the same total thickness (160nm) turns out to be much further enhanced, i.e. ~120 times that of the monolayer sample.