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Product Code: ICA12_P169

Study on Ultrafast Imaging of the Silicon Surface Ablated by a Single Nanosecond Laser Pulse
Authors:
Peng Gu, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Haiying Song, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Song Liu, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Xiangming Dong, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Qini Ge, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Shibing Liu, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Presented at ICALEO 2012

We present a technology of ultrafast imaging using femtosecond laser as probe light and ICCD camera as imaging instrument. And we obtained time-resolved ICCD images of a single nanosecond laser pulse (30ns laser pulse with a wavelength of 1064nm) ablation of silicon surface taking advantage of this technology. We have obtained time-resolved images of plasma using this method and this research shows that when a single nanosecond laser pulse was focused onto the silicon target, it induced plasma at first. And then the electrons with energy went to back to the surface and led to it damaged finally.

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