Product Code: ICA10_M702

Suppression of Laser Plasma Melting Side Walls in Laser Drilling High Aspect Ratio Microvias
Authors:
V.N. TOKAREV, A.M.Prokhorov General Physics Institute, Russian Academy of Sciences; Moscow Russia
V.A. Shmakov, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences; Moscow Russia
V.A. Yamschikov, Institute of Electrophysics and Energetics, Russian Academy of Sciences; Sankt-Peterburg Russia
R.R. Khasaya, Institute for Electrophysics and Electric Power, Russian Academy of Sciences; Sankt-Peterburg Russia
S.I. Mikolutski, Institute for Electrophysics and Electric Power, Russian Academy of Sciences; Sankt-Peterburg Russia
Vladislav Khomich, Institute of Electrophysics and Energetics, Russ.Acad.Sci.; Sankt-Peterburg Russia
Presented at ICALEO 2010

The simple theoretical model of laser plasma heating side walls in laser drilling high aspect ratio microvias in metals and semiconductors is proposed. On this basis the recommendations are given how to avoid the undesirable effect of laser plasma melting side walls. Particular examples are considered for deep laser drilling and cutting silicon wafers. As a result, a set of input parameters (laser fluence, focusing conditions, pulse duration, spatial beam profile, wavelength, etc.) allowing to optimize laser cutting and drilling, i.e. obtaining well-shaped through high-aspect-ratio microholes or cuts with parallel side walls, with minimized melt spatter, minimized HAZ, easy and minimized post-processing, is found.