Product Code: ICA10_M1303

Application of Induced Laser Ablation with Ultra Short Pulse Lasers for High Speed Thin Film Solar Cell Processing
Authors:
Gerhard Heise, Munich University of Applied Sciences; Munich Germany
Matthias Dohmke, Munich University of Applied Sciences; Munich Germany
Marcel Dickmann, Munich University of Applied Sciences; MüNchen
Jan Konrad, AVANCIS GmhH & Co. KG; Munich Germany
Isabell Richter, Munich University of Applied Sciences; MüNchen
Sebastian Sarrach, Munich University of Applied Sciences; MüNchen
Heiss Andreas, Avancis GmbH; MüNchen Germany
Helmut Vogt, Avancis GmbH; MüNchen
Heinz Huber, Munich University of Applied Sciences; Munich Germany
Presented at ICALEO 2010

The monolithical serial interconnection of CIS thin film solar cells is performed with ultra short pulse laser radiation @ 1064 nm.
We present an investigation of induced laser processes (often referred as lift-off). We show that the energy required to ablate a specific volume using induced laser processes is considerably reduced compared to direct ablation processes and that they induces less damage to its surroundings.
Direct induced (separation of a Molybdenum layer through the glass substrate, P1) and indirect induced (transparent ZnO on absorbing CIS, P3) picosecond laser ablation are not purely thermal processes working at energies per ablated volume far below the evaporation enthalpy.
With laser powers below 2W process speeds of 8 m/s for the P3 process and 4 m/s for the P1 process have been achieved.