Product Code: ICAL05_M405

Effect of Ionization on Femtosecond Laser Pulse Propagation in Silicon
Authors:
Huayu Li, Michigan State University; East Lansing Michigan USA
Hyungson Ki, Michigan State University; East Lansing MI USA
Presented at ICALEO 2005

In this article, femtosecond laser pulse propagation in a silicon target is simulated by considering the ionization process under intense electromagnetic field of the laser pulse. The electromagnetic field is computed by solving the Maxwell�s equations using the Finite-Difference Time-Domain method, and the two-temperature model is employed for electron-lattice energy coupling phenomena. The electrical conductivity is predicted by computing the electron and hole number density changes caused by the strong electromagnetic field. This study shows interesting results on the effect of the electrical conductivity change on the femtosecond laser pulse propagation in the silicon target.