Product Code: ICA12_M901

Phase Change Writing in Ge-Sb-Te Film with Ultraviolet Laser
Authors:
Weiping Zhou, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Furong Liu, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Chao He, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Yuhong Wan, College of Applied Sciences, Beijing Univ. of Technology; Beijing Peoples Republic of China
Jinmin Chen, Institute of Laser Engineering, Beijing Univ. of Technology; Beijing Peoples Republic of China
Presented at ICALEO 2012

To increase recording density of optical disk, the trends of development is using from blue-ray laser to ultraviolet laser (especially deep-ultraviolet laser). In this work, we have investigated the structure of Ge-Sb-Te phase-change material irradiated by ultraviolet laser. Ge2Sb2Te5 thin films were prepared by magnetron sputtering deposition technology. 248nm KrF excimer laser and 355nm wavelength 3rd harmonic DPSS Nd:YAG laser were applied to induce phase change under different laser powers on amorphous Ge2Sb2Te5 thin film. The microstructures of the amorphous, crystalline and metastable states were investigated by X-ray diffraction. The microstructures of the recorded pits recorded by ultraviolet (UV) laser in the films were measured and studied by atomic force microscope and scanning electron microscope. This work obtained the parameters of using UV laser to record on phase-change material and demonstrates that there is a potential to the development of optical storage by employing UV laser.