Product Code: ICAL09_507
New Analysis on Laser-induced Damage Mechnism of CCD Device
Jingjing Dai, Institute of Laser Engineering, Beijing University of Technology; Beijing Peoples Republic of China
Zhiyong Wang, Institute of Laser Engineering, Beijing University of Technology; Beijing Peoples Republic of China
Presented at ICALEO 2009
CCD (Charge Coupled Devices )is a solid-state TV camera tube which is widely used in many fields for its high nicety and sensitivity. However, just because of its high sensitivity to light, it is easily disturbed or damaged by laser. The research on laser inducing effect to CCD is of a great significance. Now the researches on the damage of CCD are focused on the power density and the energy density. The research on the peak power density inducing effect to CCD is rare. In our work, the CCD were irradiated by 800nm femtosecond pulsed laser with the pulse duration of 330fs and 1064nm nanosecond pulsed laser with the pulse duration of 10ns. The phenomena of saturation, cross-talk and totally damage were observed and the corresponding failure thresholds were measured. The experimental results showed that the energy density failure threshold of CCD irradiated by femtosecond pulsed laser is 3~4 order lower than that by nanosecond pulsed laser. Microscope was used to analyze the damage mechanism of CCD after experiments. The experimental results showed that the failure threshold of CCD was not only affected by the power density and the energy density but also affected by the peak power density, which was more important comparatively.
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