Product Code: ICAL08_M503
Excimer Laser Induced Microstructures on the Surface of Free Standing Gallium Nitride Wafers
D. Thomas, Department of Physics; Basel Switzerland
F. Parker, National Centre for Laser Applications (NCLA); Galway Ireland
A Dixit, National Centre for Laser Applications (Ncla); Galway Ireland
U. Prendergast, NCLA; Galway Ireland
A. Conneely, NCLA; Galway Ireland
G.M. O'Connor, NCLA; Galway Ireland
D. O'Mahony, Tyndall National Institute; Cork Ireland
B. Corbett, Tyndall National Institute; Cork Ireland
Presented at ICALEO 2008
Gallium Nitride (GaN) is an important material as GaN based devices have revolutionised the optoelectronics and high power electronics sectors. A great deal of attention has been focused on developing methods to fabricate semiconductor nanostructures with uniform size distributions. We report the formation of Excimer laser induced periodic surface structures. The ablation threshold of GaN with the 193nm excimer laser was determined empirically. The surface structures were produced using a phase mask with a 668.2nm periodicity. The features produced on the surface of the GaN were regular and of uniform periodicity, however, a significant amount of debris was generated during the machining of GaN. In order to try and reduce the debris generated further trials were carried out on both process optimisation and also on the use of a variety of assist gases. It is concluded that fluence does not have a significant impact on debris generation and Helium was found to be the most successful assist gas reducing the debris significantly.
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